Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
S1JLWHRVG

Таблицы данных

S1JLWHRVG

S1JLWHRVG

DIODE GEN PURP 600V 1A SOD123W

Taiwan Semiconductor Corporation

3235 0.09
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 1 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.1 V @ 1 A
V8PM6HM3/I

Таблицы данных

V8PM6HM3/I

V8PM6HM3/I

RECTIFIER BARRIER SCHOTTKY TO-27

Vishay General Semiconductor - Diodes Division

2072 0.25
- +

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Tape & Reel (TR) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1150pF @ 4V, 1MHz - 600 µA @ 60 V 60 V 8A -40°C ~ 175°C 640 mV @ 8 A
S1KLWHRVG

Таблицы данных

S1KLWHRVG

S1KLWHRVG

DIODE GEN PURP 800V 1A SOD123W

Taiwan Semiconductor Corporation

3612 0.45
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 1 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
6A100G R0G

Таблицы данных

6A100G R0G

6A100G R0G

DIODE GEN PURP 6A R-6

Taiwan Semiconductor Corporation

2657 0.25
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 6A -55°C ~ 150°C 1 V @ 6 A
SMLW RVG SMLW RVG

SMLW RVG

0.8A, 1000V, STANDARD RECOVERY R

Taiwan Semiconductor Corporation

3068 0.40
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 800mA -55°C ~ 150°C 1.1 V @ 800 mA
6A40G R0G

Таблицы данных

6A40G R0G

6A40G R0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

3367 0.25
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1 V @ 6 A
RS2D M4G

Таблицы данных

RS2D M4G

RS2D M4G

DIODE GEN PURP 200V 2A DO214AA

Taiwan Semiconductor Corporation

3633 0.09
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 1.3 V @ 2 A
6A60G R0G

Таблицы данных

6A60G R0G

6A60G R0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

2062 0.25
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1 V @ 6 A
RS2G M4G

Таблицы данных

RS2G M4G

RS2G M4G

DIODE GEN PURP 400V 2A DO214AA

Taiwan Semiconductor Corporation

3411 0.09
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
6A80G

Таблицы данных

6A80G

6A80G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation

2871 0.25
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 6A -55°C ~ 150°C 1 V @ 6 A
RS2J M4G

Таблицы данных

RS2J M4G

RS2J M4G

DIODE GEN PURP 600V 2A DO214AA

Taiwan Semiconductor Corporation

2122 0.09
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.3 V @ 2 A
RS3AHE3_A/I

Таблицы данных

RS3AHE3_A/I

RS3AHE3_A/I

DIODE GEN PURP 50V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3996 0.25
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 44pF @ 4V, 1MHz 150 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1.3 V @ 2.5 A
RS3BHE3_A/I

Таблицы данных

RS3BHE3_A/I

RS3BHE3_A/I

DIODE GEN PURP 100V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3615 0.25
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 44pF @ 4V, 1MHz 150 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.3 V @ 2.5 A
RS2K M4G

Таблицы данных

RS2K M4G

RS2K M4G

DIODE GEN PURP 800V 2A DO214AA

Taiwan Semiconductor Corporation

2088 0.09
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 2A -55°C ~ 150°C 1.3 V @ 2 A
RS3DHE3_A/I

Таблицы данных

RS3DHE3_A/I

RS3DHE3_A/I

DIODE GEN PURP 200V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3593 0.25
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 44pF @ 4V, 1MHz 150 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 1.3 V @ 2.5 A
RS2M M4G

Таблицы данных

RS2M M4G

RS2M M4G

DIODE GEN PURP 2A DO214AA

Taiwan Semiconductor Corporation

3702 0.09
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 2A -55°C ~ 150°C 1.3 V @ 2 A
RS3GHE3_A/I

Таблицы данных

RS3GHE3_A/I

RS3GHE3_A/I

DIODE GEN PURP 400V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3731 0.25
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 44pF @ 4V, 1MHz 150 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 2.5 A
SS22-LTP

Таблицы данных

SS22-LTP

SS22-LTP

DIODE SCHOTTKY 20V 2A DO214AC

Micro Commercial Co

2040 0.43
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 230pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 2A -55°C ~ 125°C 550 mV @ 2 A
MBR5100MFST1G

Таблицы данных

MBR5100MFST1G

MBR5100MFST1G

DIODE SCHOTTKY 100V 5A 5DFN

onsemi

3549 0.62
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 10 µA @ 100 V 100 V 5A -55°C ~ 175°C 980 mV @ 5 A
SS1FH6-M3/I

Таблицы данных

SS1FH6-M3/I

SS1FH6-M3/I

DIODE SCHOTTKY 60V 1A DO219AB

Vishay General Semiconductor - Diodes Division

2552 0.09
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 90pF @ 4V, 1MHz - 3 µA @ 60 V 60 V 1A -55°C ~ 175°C 700 mV @ 1 A
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