Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
UG4D-M3/73

Таблицы данных

UG4D-M3/73

UG4D-M3/73

DIODE GEN PURP 200V 4A DO201AD

Vishay General Semiconductor - Diodes Division

3074 0.19
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 30 ns 5 µA @ 200 V 200 V 4A -55°C ~ 150°C 950 mV @ 4 A
BAT42W-HE3-08

Таблицы данных

BAT42W-HE3-08

BAT42W-HE3-08

DIODE SCHOTTKY 30V 200MA SOD123

Vishay General Semiconductor - Diodes Division

3602 0.06
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 7pF @ 1V, 1MHz 5 ns 500 nA @ 25 V 30 V 200mA (DC) 125°C (Max) 650 mV @ 50 mA
MUR140-T

Таблицы данных

MUR140-T

MUR140-T

DIODE GEN PURP 400V 1A DO41

Diodes Incorporated

2785 0.19
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.25 V @ 1 A
1N5819 BK TIN/LEAD

Таблицы данных

1N5819 BK TIN/LEAD

1N5819 BK TIN/LEAD

DIODE SCHOTTKY 40V 1A DO41

Central Semiconductor Corp

3120 0.06
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 40 V 40 V 1A -65°C ~ 150°C 600 mV @ 1 A
BYG24D-E3/TR3

Таблицы данных

BYG24D-E3/TR3

BYG24D-E3/TR3

DIODE AVALANCHE 200V 1.5A

Vishay General Semiconductor - Diodes Division

3246 0.19
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount - 140 ns 1 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1.25 V @ 1.5 A
1N5819 TR TIN/LEAD

Таблицы данных

1N5819 TR TIN/LEAD

1N5819 TR TIN/LEAD

DIODE SCHOTTKY 40V 1A DO41

Central Semiconductor Corp

2869 0.06
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 40 V 40 V 1A -65°C ~ 150°C 600 mV @ 1 A
BYG24G-E3/TR3

Таблицы данных

BYG24G-E3/TR3

BYG24G-E3/TR3

DIODE AVALANCHE 400V 1.5A

Vishay General Semiconductor - Diodes Division

2607 0.19
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount - 140 ns 1 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1.25 V @ 1.5 A
NSVBAS16W1T1G

Таблицы данных

NSVBAS16W1T1G

NSVBAS16W1T1G

SS SC88 SWITCHING DIODE

onsemi

2429 0.06
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 2pF @ 0V, 1MHz 3 ns 1 µA @ 100 V 100 V 200mA (DC) 150°C (Max) 1.2 V @ 100 mA
BYG24J-E3/TR3

Таблицы данных

BYG24J-E3/TR3

BYG24J-E3/TR3

DIODE AVALANCHE 600V 1.5A

Vishay General Semiconductor - Diodes Division

2323 0.19
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount - 140 ns 1 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.25 V @ 1.5 A
SS13 M2G

Таблицы данных

SS13 M2G

SS13 M2G

DIODE SCHOTTKY 30V 1A DO214AC

Taiwan Semiconductor Corporation

2330 0.06
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 30 V 30 V 1A -55°C ~ 125°C 500 mV @ 1 A
RS1AL RVG

Таблицы данных

RS1AL RVG

RS1AL RVG

DIODE GEN PURP 50V 800MA SUB SMA

Taiwan Semiconductor Corporation

2680 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
SS110 M2G

Таблицы данных

SS110 M2G

SS110 M2G

DIODE SCHOTTKY 100V 1A DO214AC

Taiwan Semiconductor Corporation

2408 0.07
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 1A -55°C ~ 125°C 800 mV @ 1 A
RS1BL RUG

Таблицы данных

RS1BL RUG

RS1BL RUG

DIODE GEN PURP 100V 800MA SUBSMA

Taiwan Semiconductor Corporation

2000 0.19
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
SS14 M2G

Таблицы данных

SS14 M2G

SS14 M2G

DIODE SCHOTTKY 40V 1A DO214AC

Taiwan Semiconductor Corporation

2779 0.07
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 40 V 40 V 1A -55°C ~ 125°C 500 mV @ 1 A
RS1DL RUG

Таблицы данных

RS1DL RUG

RS1DL RUG

DIODE GEN PURP 200V 800MA SUBSMA

Taiwan Semiconductor Corporation

3892 0.19
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
SS16 M2G

Таблицы данных

SS16 M2G

SS16 M2G

DIODE SCHOTTKY 60V 1A DO214AC

Taiwan Semiconductor Corporation

3124 0.07
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 60 V 60 V 1A -55°C ~ 150°C 750 mV @ 1 A
RS1GL RUG

Таблицы данных

RS1GL RUG

RS1GL RUG

DIODE GEN PURP 400V 800MA SUBSMA

Taiwan Semiconductor Corporation

3946 0.19
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
BASH21LT1G

Таблицы данных

BASH21LT1G

BASH21LT1G

HIGH VOLT DIODE

onsemi

2355 0.07
- +

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Расследования

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 250 V 200mA (DC) -55°C ~ 175°C 1.25 V @ 200 mA
RS1JL RUG

Таблицы данных

RS1JL RUG

RS1JL RUG

DIODE GEN PURP 600V 800MA SUBSMA

Taiwan Semiconductor Corporation

3940 0.19
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
BAS170WS-G3-18

Таблицы данных

BAS170WS-G3-18

BAS170WS-G3-18

DIODE SCHOTTKY 70V 70MA SOD323

Vishay General Semiconductor - Diodes Division

2634 0.07
- +

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Расследования

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2pF @ 0V, 1MHz - 10 µA @ 70 V 70 V 70mA -55°C ~ 125°C 1 V @ 15 mA
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