Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
BAV302-TR3

Таблицы данных

BAV302-TR3

BAV302-TR3

DIODE GP 150V 250MA MICROMELF

Vishay General Semiconductor - Diodes Division

2764 0.04
- +

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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 1.5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 150 V 250mA (DC) 175°C (Max) 1 V @ 100 mA
PMEG6010CPASX

Таблицы данных

PMEG6010CPASX

PMEG6010CPASX

DIODE SCHOTTKY 60V 1A SOT1061

Nexperia USA Inc.

3682 0.16
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 120pF @ 1V, 1MHz 3 ns 100 µA @ 60 V 60 V 1A 150°C (Max) 540 mV @ 1 A
BAS33-TAP

Таблицы данных

BAS33-TAP

BAS33-TAP

DIODE GEN PURP 30V 200MA DO35

Vishay General Semiconductor - Diodes Division

2119 0.04
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 3pF @ 0V, 1MHz - 1 nA @ 15 V 30 V 200mA 175°C (Max) 1 V @ 100 mA
RS3K V6G

Таблицы данных

RS3K V6G

RS3K V6G

DIODE GEN PURP 800V 3A DO214AB

Taiwan Semiconductor Corporation

3547 0.16
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 500 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C -
BAS21LSYL

Таблицы данных

BAS21LSYL

BAS21LSYL

BAS21LS/SOD882BD/XSON2

Nexperia USA Inc.

3379 0.04
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 200 V 250mA (DC) 150°C 1.25 V @ 200 mA
RS3M V6G

Таблицы данных

RS3M V6G

RS3M V6G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2255 0.16
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 500 ns 10 µA @ 1000 V - 3A -55°C ~ 150°C -
BAS16WS-G3-18

Таблицы данных

BAS16WS-G3-18

BAS16WS-G3-18

DIODE GEN PURP 75V 250MA SOD323

Vishay General Semiconductor - Diodes Division

3136 0.04
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 6 ns 1 µA @ 75 V 75 V 250mA -55°C ~ 150°C 1.25 V @ 150 mA
SSB43L-M3/5BT SSB43L-M3/5BT

SSB43L-M3/5BT

DIODE SCHOTTKY 4A 30V DO-214AC

Vishay General Semiconductor - Diodes Division

2914 0.16
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 600 µA @ 30 V 30 V 4A -65°C ~ 150°C 490 mV @ 4 A
BAS19-G3-18

Таблицы данных

BAS19-G3-18

BAS19-G3-18

DIODE GEN PURP 100V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3164 0.04
- +

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Расследования

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 100 V 100 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
SSB43L-M3/52T SSB43L-M3/52T

SSB43L-M3/52T

DIODE SCHOTTKY 4A 30V DO-214AA

Vishay General Semiconductor - Diodes Division

3078 0.16
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 600 µA @ 30 V 30 V 4A -65°C ~ 150°C 450 mV @ 4 A
BAS20-G3-18

Таблицы данных

BAS20-G3-18

BAS20-G3-18

DIODE GEN PURP 150V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3896 0.04
- +

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Расследования

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 150 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
EGL41A-E3/96

Таблицы данных

EGL41A-E3/96

EGL41A-E3/96

DIODE GEN PURP 50V 1A DO213AB

Vishay General Semiconductor - Diodes Division

2247 0.16
- +

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Расследования

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1 V @ 1 A
BAS21-G3-18

Таблицы данных

BAS21-G3-18

BAS21-G3-18

DIODE GEN PURP 200V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3549 0.04
- +

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Расследования

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 200 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
EGL41F-E3/96

Таблицы данных

EGL41F-E3/96

EGL41F-E3/96

DIODE GEN PURP 300V 1A DO213AB

Vishay General Semiconductor - Diodes Division

3003 0.16
- +

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Расследования

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 14pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 1A -65°C ~ 175°C 1.25 V @ 1 A
BAS19-G3-08

Таблицы данных

BAS19-G3-08

BAS19-G3-08

DIODE GEN PURP 100V 200MA SOT23

Vishay General Semiconductor - Diodes Division

2366 0.04
- +

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Расследования

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 100 V 100 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
SS15 SS15

SS15

DIODE SCHOTTKY 50V 1A DO214AC

Taiwan Semiconductor Corporation

2823 0.16
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 50 V 50 V 1A (DC) -55°C ~ 150°C 750 mV @ 1 A
BAS20-G3-08

Таблицы данных

BAS20-G3-08

BAS20-G3-08

DIODE GEN PURP 150V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3015 0.04
- +

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Расследования

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 150 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
CRS14(TE85L,Q,M)

Таблицы данных

CRS14(TE85L,Q,M)

CRS14(TE85L,Q,M)

DIODE SCHOTTKY 30V 2A S-FLAT

Toshiba Semiconductor and Storage

2609 0.16
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 90pF @ 10V, 1MHz - 50 µA @ 30 V 30 V 2A -40°C ~ 150°C 490 mV @ 2 A
BAS21-G3-08

Таблицы данных

BAS21-G3-08

BAS21-G3-08

DIODE GEN PURP 200V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3997 0.04
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 200 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
CRS15(TE85L,Q,M)

Таблицы данных

CRS15(TE85L,Q,M)

CRS15(TE85L,Q,M)

DIODE SCHOTTKY 30V 3A S-FLAT

Toshiba Semiconductor and Storage

2160 0.16
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 90pF @ 10V, 1MHz - 50 µA @ 30 V 30 V 3A (DC) -40°C ~ 150°C 520 mV @ 3 A
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