Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
	1N2159 DO5 40 AMP SILICON RECTFIER Solid State Inc.	3700	2.50	- + Добавить Расследования	Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 µA @ 500 V	500 V	40A	-65°C ~ 200°C	1.19 V @ 90 A
Таблицы данных	VS-16F60 DIODE GEN PURP 600V 16A DO203AA Vishay General Semiconductor - Diodes Division	3711	6.48	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	12 mA @ 600 V	600 V	16A	-65°C ~ 175°C	1.23 V @ 50 A
	1N1434R DO5 40 AMP SILICON RECTFIER Solid State Inc.	2012	2.50	- + Добавить Расследования	Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Stud Mount	-	-	10 µA @ 50 V	50 V	40A	-65°C ~ 200°C	1.19 V @ 90 A
Таблицы данных	1N3210 DIODE GEN PURP 200V 15A DO5 GeneSiC Semiconductor	2023	6.59	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 µA @ 50 V	200 V	15A	-65°C ~ 175°C	1.5 V @ 15 A
	1N2273R DO5 40 AMP SILICON RECTFIER Solid State Inc.	2960	2.50	- + Добавить Расследования	Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Stud Mount	-	-	10 µA @ 100 V	100 V	40A	-65°C ~ 200°C	1.19 V @ 90 A
Таблицы данных	STPSC20065W DIODE SCHOTTKY 650V 20A DO247 STMicroelectronics	3804	6.64	- + Добавить Расследования	Tube	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1250pF @ 0V, 1MHz	0 ns	300 µA @ 650 V	650 V	20A	-40°C ~ 175°C	1.45 V @ 20 A
	1N2285 DO5 40 AMP SILICON RECTFIER Solid State Inc.	3480	2.50	- + Добавить Расследования	Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 µA @ 600 V	600 V	40A	-65°C ~ 200°C	1.19 V @ 90 A
	SCS220AGC17 DIODE SCHOTTKY 650V 20A TO220AC Rohm Semiconductor	3002	6.69	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	730pF @ 1V, 1MHz	0 ns	400 µA @ 600 V	650 V	20A (DC)	175°C	1.55 V @ 20 A
Таблицы данных	IDM02G120C5XTMA1 DIODE SCHOTTKY 1200V 2A TO252-2 Infineon Technologies	3595	2.56	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	182pF @ 1V, 1MHz	0 ns	18 µA @ 1200 V	1200 V	2A (DC)	-55°C ~ 175°C	1.65 V @ 2 A
Таблицы данных	VS-65APF12LHM3 DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division	2969	6.70	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	480 ns	100 µA @ 1200 V	1200 V	65A	-40°C ~ 150°C	1.42 V @ 65 A
Таблицы данных	60HFR60 DO5 60 AMP SILICON RECTFIER AK Solid State Inc.	2764	2.95	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	200 µA @ 600 V	600 V	60A	-65°C ~ 150°C	1.3 V @ 60 A
Таблицы данных	VS-65EPF06LHM3 DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division	2060	6.70	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	180 ns	100 µA @ 600 V	600 V	65A	-40°C ~ 150°C	1.32 V @ 65 A
	IDK02G120C5XTMA1 SIC DISCRETE Infineon Technologies	781	3.15	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	182pF @ 1V, 1MHz	-	18 µA @ 1200 V	1200 V	11.8A (DC)	-55°C ~ 175°C	1.65 V @ 2 A
Таблицы данных	VS-25F80 DIODE GEN PURP 800V 25A DO203AA Vishay General Semiconductor - Diodes Division	2678	7.09	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	12 mA @ 800 V	800 V	25A	-65°C ~ 175°C	1.3 V @ 78 A
Таблицы данных	BY6 Std Rect, 6000V, 1A DComponents	3427	3.50	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	1 µA @ 6000 V	6000 V	1A	-50°C ~ 150°C	6 V @ 1 A
Таблицы данных	STTH1506DPI DIODE GEN PURP 600V 15A DOP3I STMicroelectronics	3393	7.18	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	20 µA @ 600 V	600 V	15A	150°C (Max)	3.6 V @ 15 A
	1N2129A DO5 70 AMP SILICON RECTIFIER Solid State Inc.	100	3.95	- + Добавить Расследования	Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	25 µA @ 100 V	100 V	70A	-65°C ~ 200°C	1.25 V @ 200 A
Таблицы данных	C4D10120E-TR DIODE SCHOTTKY 1.2KV 33A TO252-2 Wolfspeed, Inc.	2785	7.21	- + Добавить Расследования	Tape & Reel (TR)	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	754pF @ 0V, 1MHz	0 ns	250 µA @ 1200 V	1200 V	33A (DC)	-55°C ~ 175°C	1.8 V @ 10 A
	1N2131R DO5 70 AMP SILICON RECTIFIER Solid State Inc.	2941	3.95	- + Добавить Расследования	Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Stud Mount	-	-	25 µA @ 200 V	200 V	70A	-65°C ~ 200°C	1.25 V @ 200 A
Таблицы данных	IDWD10G120C5XKSA1 SIC SCHOTTKY 1200V 10A TO247-2 Infineon Technologies	3747	7.25	- + Добавить Расследования	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	730pF @ 1V, 1MHz	0 ns	80 µA @ 1200 V	1200 V	34A (DC)	-55°C ~ 175°C	1.65 V @ 10 A

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