Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
MUR480ERLG

Таблицы данных

MUR480ERLG

MUR480ERLG

DIODE GEN PURP 800V 4A AXIAL

onsemi

2395 0.84
- +

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Tape & Reel (TR),Cut Tape (CT) SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 25 µA @ 800 V 800 V 4A -65°C ~ 175°C 1.85 V @ 4 A
STTH806DTI

Таблицы данных

STTH806DTI

STTH806DTI

DIODE GEN PURP 600V 8A TO220AC

STMicroelectronics

609 4.04
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 10 µA @ 600 V 600 V 8A 175°C (Max) 3.6 V @ 8 A
MBRD320T4G

Таблицы данных

MBRD320T4G

MBRD320T4G

DIODE SCHOTTKY 20V 3A DPAK

onsemi

1900 0.85
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 200 µA @ 20 V 20 V 3A -65°C ~ 150°C 600 mV @ 3 A
VS-EPU6006-N3

Таблицы данных

VS-EPU6006-N3

VS-EPU6006-N3

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

276 4.05
- +

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Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 110 ns 30 µA @ 600 V 600 V 60A -65°C ~ 175°C 1.5 V @ 60 A
NRVTS10100MFST1G

Таблицы данных

NRVTS10100MFST1G

NRVTS10100MFST1G

DIODE SCHOTTKY 100V 10A 5DFN

onsemi

1500 0.85
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 100 V 100 V 10A -55°C ~ 175°C 720 mV @ 10 A
SCS315AHGC9

Таблицы данных

SCS315AHGC9

SCS315AHGC9

SHORTER RECOVERY TIME, ENABLING

Rohm Semiconductor

953 4.08
- +

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Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 750pF @ 1V, 1MHz 0 ns 75 µA @ 650 V 650 V 15A (DC) 175°C (Max) -
STPS5L40RL

Таблицы данных

STPS5L40RL

STPS5L40RL

DIODE SCHOTTKY 40V 5A DO201AD

STMicroelectronics

1384 0.85
- +

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Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 40 V 40 V 5A 150°C (Max) 500 mV @ 5 A
FFH50US60S-F085

Таблицы данных

FFH50US60S-F085

FFH50US60S-F085

DIODE GEN PURP 600V 50A TO247-2

onsemi

533 4.09
- +

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Tube Automotive, AEC-Q101, Stealth™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 163 ns 100 µA @ 600 V 600 V 50A -55°C ~ 175°C 1.69 V @ 50 A
HS5D V7G

Таблицы данных

HS5D V7G

HS5D V7G

DIODE GEN PURP 200V 5A DO214AB

Taiwan Semiconductor Corporation

5000 1.48
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 5A -55°C ~ 150°C 1 V @ 5 A
C3D06065E

Таблицы данных

C3D06065E

C3D06065E

DIODE SCHOTTKY 650V 2A TO252-2

Wolfspeed, Inc.

5114 4.11
- +

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Tube Z-Rec® RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Not For New Designs Surface Mount 295pF @ 0V, 1MHz 0 ns 50 µA @ 650 V 650 V 20A (DC) -55°C ~ 175°C 1.7 V @ 6 A
V10P45S-M3/87A

Таблицы данных

V10P45S-M3/87A

V10P45S-M3/87A

DIODE SCHOTTKY 45V 4.4A TO277A

Vishay General Semiconductor - Diodes Division

4495 0.86
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 800 µA @ 45 V 45 V 4.4A -40°C ~ 150°C 570 mV @ 10 A
ISL9R3060G2-F085

Таблицы данных

ISL9R3060G2-F085

ISL9R3060G2-F085

DIODE GEN PURP 600V 30A TO247-2

onsemi

487 4.13
- +

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Tube Automotive, AEC-Q101, Stealth™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 100 µA @ 600 V 600 V 30A -55°C ~ 175°C 2.4 V @ 30 A
V35PWM45-M3/I

Таблицы данных

V35PWM45-M3/I

V35PWM45-M3/I

DIODE SCHOTTKY 45V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division

4130 0.86
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 4020pF @ 4V, 1MHz - 1.1 mA @ 45 V 45 V 35A -40°C ~ 175°C 670 mV @ 35 A
RURG3060-F085

Таблицы данных

RURG3060-F085

RURG3060-F085

DIODE GEN PURP 600V 30A TO247-2

onsemi

347 4.14
- +

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Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 80 ns 250 µA @ 600 V 600 V 30A -55°C ~ 175°C 1.5 V @ 30 A
SE10DB-M3/I

Таблицы данных

SE10DB-M3/I

SE10DB-M3/I

DIODE GEN PURP 100V 3A TO263AC

Vishay General Semiconductor - Diodes Division

1935 0.86
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 67pF @ 4V, 1MHz 3 µs 15 µA @ 100 V 100 V 3A -55°C ~ 175°C 1.15 V @ 10 A
STPSC1006D

Таблицы данных

STPSC1006D

STPSC1006D

DIODE SCHOTTKY 600V 10A TO220AC

STMicroelectronics

387 4.23
- +

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Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 650pF @ 0V, 1MHz 0 ns 300 µA @ 600 V 600 V 10A -40°C ~ 175°C 1.75 V @ 10 A
BYV27-600-TAP

Таблицы данных

BYV27-600-TAP

BYV27-600-TAP

DIODE AVALANCHE 600V 2A SOD57

Vishay General Semiconductor - Diodes Division

7037 0.87
- +

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Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 250 ns 5 µA @ 600 V 600 V 2A -55°C ~ 175°C 1.35 V @ 3 A
FFH60UP40S

Таблицы данных

FFH60UP40S

FFH60UP40S

DIODE GEN PURP 400V 60A TO247

onsemi

333 4.25
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 85 ns 100 µA @ 400 V 400 V 60A -65°C ~ 150°C 1.3 V @ 60 A
B380-13-F

Таблицы данных

B380-13-F

B380-13-F

DIODE SCHOTTKY 80V 3A SMC

Diodes Incorporated

2421 0.87
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 100pF @ 4V, 1MHz - 500 µA @ 80 V 80 V 3A -55°C ~ 125°C 790 mV @ 3 A
1N5811C.TR

Таблицы данных

1N5811C.TR

1N5811C.TR

DIODE GEN PURP 150V 6A AXIAL

Semtech Corporation

1115 6.91
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 5V, 1MHz 30 ns 5 µA @ 150 V 150 V 6A -65°C ~ 175°C 875 mV @ 4 A
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