Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
S10JC R6G S10JC R6G

S10JC R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2889 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 10A (DC) -55°C ~ 150°C 1.1 V @ 10 A
SS33 R6 SS33 R6

SS33 R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3935 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 30 V 30 V 3A (DC) -55°C ~ 125°C 500 mV @ 3 A
HS3M R6 HS3M R6

HS3M R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3008 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 1000 V 1000 V 3A -55°C ~ 150°C 1.7 V @ 3 A
S4G M6 S4G M6

S4G M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3235 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 400 V 400 V 4A -55°C ~ 150°C 1.15 V @ 4 A
SS320 M6 SS320 M6

SS320 M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3151 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 200 V 200 V 3A (DC) -55°C ~ 150°C 950 mV @ 3 A
HS5B R6 HS5B R6

HS5B R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2051 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
SK82C R6G SK82C R6G

SK82C R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2803 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 8A (DC) -55°C ~ 125°C 550 mV @ 8 A
RS3J R6G RS3J R6G

RS3J R6G

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3859 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 250 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.3 V @ 3 A
MUR420S R6 MUR420S R6

MUR420S R6

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2888 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 875 mV @ 4 A
S3K R6 S3K R6

S3K R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2862 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.15 V @ 3 A
S12GC R7 S12GC R7

S12GC R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3647 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 12A (DC) -55°C ~ 150°C 1.1 V @ 12 A
BY329-1200,127

Таблицы данных

BY329-1200,127

BY329-1200,127

DIODE GEN PURP 1.2KV 8A TO220AC

NXP USA Inc.

3648 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 135 ns 1 mA @ 1000 V 1200 V 8A 150°C (Max) 1.85 V @ 20 A
S8KC R7 S8KC R7

S8KC R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3300 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 48pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 8A (DC) -55°C ~ 150°C 985 mV @ 8 A
BY329X-1500,127

Таблицы данных

BY329X-1500,127

BY329X-1500,127

DIODE GEN PURP 1.5KV 6A TO220F

NXP USA Inc.

3556 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 230 ns - 1500 V 6A (DC) 150°C (Max) 1.45 V @ 6.5 A
SS32 R6G SS32 R6G

SS32 R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3880 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A (DC) -55°C ~ 125°C 500 mV @ 3 A
BY359X-1500,127

Таблицы данных

BY359X-1500,127

BY359X-1500,127

DIODE GEN PURP 1.5KV 10A TO220F

NXP USA Inc.

2732 0.00
- +

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Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - 600 ns 100 µA @ 1300 V 1500 V 10A (DC) 150°C (Max) 1.8 V @ 20 A
S4J R6G S4J R6G

S4J R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2022 0.00
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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 600 V 600 V 4A -55°C ~ 150°C 1.15 V @ 4 A
BY459-1500,127

Таблицы данных

BY459-1500,127

BY459-1500,127

DIODE GEN PURP 1.5KV 12A TO220AC

NXP USA Inc.

3911 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 350 ns - 1500 V 12A (DC) 150°C (Max) 1.3 V @ 6.5 A
ES3J M6 ES3J M6

ES3J M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3489 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
BY459X-1500S,127

Таблицы данных

BY459X-1500S,127

BY459X-1500S,127

DIODE GEN PURP 1.5KV 10A TO220F

NXP USA Inc.

3715 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 220 ns 250 µA @ 1300 V 1500 V 10A (DC) 150°C (Max) 1.35 V @ 6.5 A
Total 48193 Records«Prev1... 17931794179517961797179817991800...2410Next»
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