Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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S4D10120HDIODE SCHOTTKY SILICON CARBIDE S |
598 | 7.13 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 772pF @ 0V, 1MHz | 0 ns | 30 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.8 V @ 10 A | |||
![]() Таблицы данных |
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F1200DFast Rect., 200V, 12.00A, 200ns |
3500 | 1.30 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 5 µA @ 200 V | 200 V | 12A | -50°C ~ 150°C | 910 mV @ 12 A | |||
![]() Таблицы данных |
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P2500WST Rect, 1600V, 25A |
500 | 2.48 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 1.5 µs | 10 µA @ 1600 V | 1600 V | 25A | -50°C ~ 175°C | 1.1 V @ 25 A | |||
![]() Таблицы данных |
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NXPSC10650D6JDIODE SCHOTTKY 650V 10A DPAK |
7440 | 6.35 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |||
![]() Таблицы данных |
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SS36FSCHOTTKY DIODE SMAF 60V 3A |
648000 | 0.17 |
ДобавитьРасследования |
Tape & Reel (TR) | SMAF | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | - | ||
![]() Таблицы данных |
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MBR1040HEWS_R1_00001SOD-323HE, SKY |
4880 | 1.31 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 580 mV @ 1 A | |||
![]() Таблицы данных |
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1N1187ADO5 35 AMP SILICON RECTFIER |
1000 | 2.50 |
ДобавитьРасследования |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 µA @ 300 V | 300 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | |||
![]() Таблицы данных |
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IDK10G65C5XTMA2DIODE SCHOTTKY 650V 10A TO263-2 |
1536 | 5.01 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | - | 650 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | ||
![]() Таблицы данных |
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SL1M-Q-CTCUT-TAPE VERSION. STANDARD RECO |
6000 | 0.48 |
ДобавитьРасследования |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1 µs | 1 µA @ 1000 V | 1000 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |||
![]() Таблицы данных |
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1N4007-T/BGeneral Diode DO-41 1KV 1A |
315000 | 0.17 |
ДобавитьРасследования |
Tape & Box (TB) | DO-41 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 150°C | 1 V @ 1 A | ||
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S4D15120ADIODE SCHOTTKY SILICON CARBIDE S |
290 | 7.42 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 0V, 1MHz | 0 ns | 35 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 1.8 V @ 15 A | |||
![]() Таблицы данных |
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SBT1045-3GSchottky, 45V, 10A, 0.50V, 135A |
4000 | 1.31 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 120 µA @ 45 V | 45 V | 10A | -50°C ~ 150°C | 500 mV @ 10 A | |||
![]() Таблицы данных |
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JPAD500 TO-92 2LDIODE GEN PURP 35V 10MA TO92 |
500 | 2.50 |
ДобавитьРасследования |
Bulk | PAD | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 1.5pF @ 5V, 1MHz | - | 500 pA @ 20 V | 35 V | 10mA | -55°C ~ 150°C | 1.5 V @ 5 mA | ||
![]() Таблицы данных |
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SK58SchottkyD, 80V, 5A |
12000 | 0.48 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 80 V | 80 V | 5A | -50°C ~ 150°C | 830 mV @ 5 A | |||
![]() Таблицы данных |
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FR107-T/BFast Recovery DO-41 1KV 1A |
140000 | 0.17 |
ДобавитьРасследования |
Tape & Box (TB) | DO-41 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 6 µA @ 1000 V | 1000 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | ||
![]() Таблицы данных |
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GD30MPS06J650V 30A TO-263-7 SIC SCHOTTKY M |
962 | 7.43 |
ДобавитьРасследования |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 735pF @ 1V, 1MHz | - | - | 650 V | 51A (DC) | -55°C ~ 175°C | - | ||
![]() Таблицы данных |
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SBT1040-3GSchottky, 40V, 10A, 0.50V, 135A |
1100 | 1.31 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 120 µA @ 40 V | 40 V | 10A | -50°C ~ 150°C | 500 mV @ 10 A | |||
![]() Таблицы данных |
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40HFR30DO5 40 AMP SILICON RECTFIER AK |
500 | 2.50 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 300 V | 40A | - | - | |||
![]() Таблицы данных |
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DSK310SCHOTTKY DIODE SOD-123FL 100V 3A |
69000 | 0.17 |
ДобавитьРасследования |
Tape & Reel (TR) | SOD-123FL | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 160pF @ 4V, 1MHz | - | 0.3 mA @ 100 V | 100 V | 3A | -55°C ~ 125°C | 850 mV @ 3 A | ||
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UES803REC , UFR 700A 150V KK DO5 |
3617 | 7.50 |
ДобавитьРасследования |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 150 V | 70A | - | - |