Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SRA1040 SRA1040

SRA1040

DIODE SCHOTTKY 40V 10A TO220AC

Taiwan Semiconductor Corporation

3718 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 10A (DC) -55°C ~ 125°C 550 mV @ 10 A
UGA15120H UGA15120H

UGA15120H

DIODE GEN PURP 15A TO220AC

Taiwan Semiconductor Corporation

3470 0.00
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Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 65 ns 5 µA @ 1200 V 1200 V 15A (DC) -55°C ~ 175°C 2.9 V @ 15 A
S10JC R7 S10JC R7

S10JC R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3375 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 10A (DC) -55°C ~ 150°C 1.1 V @ 10 A
IDD15E60BUMA1 IDD15E60BUMA1

IDD15E60BUMA1

DIODE GEN PURP 600V TO252-3

Infineon Technologies

2466 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 87 ns 50 µA @ 600 V 600 V 29.2A (DC) -40°C ~ 175°C 2 V @ 15 A
EGF1THE3/67A

Таблицы данных

EGF1THE3/67A

EGF1THE3/67A

DIODE GEN PURP 1.3KV 1A DO214BA

Vishay General Semiconductor - Diodes Division

2205 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 75 ns 5 µA @ 1300 V 1300 V 1A -55°C ~ 150°C 3 V @ 1 A
6A60GH A0G 6A60GH A0G

6A60GH A0G

DIODE GEN PURP 6A 600V R-6

Taiwan Semiconductor Corporation

3625 0.00
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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 6A (DC) -55°C ~ 150°C 1 V @ 6 A
MBRF5200 MBRF5200

MBRF5200

DIODE SCHOTTKY 200V 5A ITO220AC

Taiwan Semiconductor Corporation

3513 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 5A (DC) -55°C ~ 150°C 1.02 V @ 5 A
S5B M6 S5B M6

S5B M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2897 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 5A -55°C ~ 150°C 1.15 V @ 5 A
RJU60C2DPD-00#J2 RJU60C2DPD-00#J2

RJU60C2DPD-00#J2

DIODE GEN PURP 600V TO252

Renesas Electronics America Inc

2426 0.00
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Tube RoHS - - Active - - - - - - - -
EGP10GE-E3/54

Таблицы данных

EGP10GE-E3/54

EGP10GE-E3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3437 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -65°C ~ 150°C 1.25 V @ 1 A
SF42GH SF42GH

SF42GH

DIODE GEN PURP 100V 4A DO201AD

Taiwan Semiconductor Corporation

3907 0.00
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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 4A (DC) -55°C ~ 150°C 1 V @ 4 A
SF61GH SF61GH

SF61GH

DIODE GEN PURP 50V 6A DO201AD

Taiwan Semiconductor Corporation

3226 0.00
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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 6A (DC) -55°C ~ 150°C 975 mV @ 6 A
MUR305S R7 MUR305S R7

MUR305S R7

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2352 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 50 V 50 V 3A -55°C ~ 175°C 875 mV @ 3 A
RJU60C2TDPP-AJ#T2 RJU60C2TDPP-AJ#T2

RJU60C2TDPP-AJ#T2

DIODE GEN PURP 600V TO220FP

Renesas Electronics America Inc

2543 0.00
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Расследования

Tube RoHS - - Active - - - - - - - -
GF1AHE3/67A

Таблицы данных

GF1AHE3/67A

GF1AHE3/67A

DIODE GEN PURP 50V 1A DO214BA

Vishay General Semiconductor - Diodes Division

3660 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - 2 µs 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1T1G 1T1G

1T1G

DIODE GEN PURP 1A 50V TS-1

Taiwan Semiconductor Corporation

2668 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A (DC) -55°C ~ 150°C 1.1 V @ 1 A
SR305 SR305

SR305

DIODE SCHOTTKY 3A 50V DO-201AD

Taiwan Semiconductor Corporation

2363 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 3A (DC) -55°C ~ 150°C 700 mV @ 3 A
RJU60C6TDPP-AJ#T2 RJU60C6TDPP-AJ#T2

RJU60C6TDPP-AJ#T2

DIODE GEN PURP 600V TO220FP

Renesas Electronics America Inc

3960 0.00
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Расследования

Tube RoHS - - Active - - - - - - - -
GF1GHE3/67A

Таблицы данных

GF1GHE3/67A

GF1GHE3/67A

DIODE GEN PURP 400V 1A DO214BA

Vishay General Semiconductor - Diodes Division

2369 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - 2 µs 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SRA10100 SRA10100

SRA10100

DIODE SCHOTTKY 100V 10A TO220AC

Taiwan Semiconductor Corporation

3965 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 10A (DC) -55°C ~ 150°C 850 mV @ 10 A
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