Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
BAS21J/ZLF

Таблицы данных

BAS21J/ZLF

BAS21J/ZLF

DIODE GEN PURP 300V 250MA SC90

Nexperia USA Inc.

3870 0.00
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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 2pF @ 0V, 1MHz 50 ns 100 nA @ 250 V 300 V 250mA (DC) 150°C (Max) 1.1 V @ 100 mA
6A20G A0G

Таблицы данных

6A20G A0G

6A20G A0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

3242 0.00
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Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
HER605-TP

Таблицы данных

HER605-TP

HER605-TP

DIODE GPP HE 6A R-6

Micro Commercial Co

2600 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 100pF @ 4V, 1MHz 50 ns - 400 V 6A -55°C ~ 150°C -
RS3B V6G

Таблицы данных

RS3B V6G

RS3B V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

3273 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
CDS5711-1 CDS5711-1

CDS5711-1

SCHOTTKY DIODE

Microchip Technology

2566 0.00
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Bulk RoHS - - Active - - - - - - - -
F1T1GHA1G

Таблицы данных

F1T1GHA1G

F1T1GHA1G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

3009 0.00
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Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
BAS21J/ZLX

Таблицы данных

BAS21J/ZLX

BAS21J/ZLX

DIODE GEN PURP 300V 250MA SC90

Nexperia USA Inc.

3347 0.00
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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 2pF @ 0V, 1MHz 50 ns 100 nA @ 250 V 300 V 250mA (DC) 150°C (Max) 1.1 V @ 100 mA
6A20GHA0G

Таблицы данных

6A20GHA0G

6A20GHA0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

3709 0.00
- +

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Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
HER606-TP

Таблицы данных

HER606-TP

HER606-TP

DIODE GPP HE 6A R-6

Micro Commercial Co

2505 0.00
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 65pF @ 4V, 1MHz 75 ns - 600 V 6A -55°C ~ 150°C -
RS3D V7G

Таблицы данных

RS3D V7G

RS3D V7G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

3398 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C -
CDS5712-1 CDS5712-1

CDS5712-1

SCHOTTKY DIODE

Microchip Technology

3474 0.00
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Bulk RoHS - - Active - - - - - - - -
F1T2G A1G

Таблицы данных

F1T2G A1G

F1T2G A1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation

3178 0.00
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
BAS316/DG/B3,115

Таблицы данных

BAS316/DG/B3,115

BAS316/DG/B3,115

DIODE GEN PURP 100V 250MA TO236

Nexperia USA Inc.

3468 0.00
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Tape & Reel (TR) Automotive, AEC-Q101, BAS16 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 1.5pF @ 0V, 1MHz 4 ns 500 nA @ 80 V 100 V 250mA (DC) 150°C (Max) 1.25 V @ 150 mA
6A40G A0G

Таблицы данных

6A40G A0G

6A40G A0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

3804 0.00
- +

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Расследования

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1 V @ 6 A
HER607-TP

Таблицы данных

HER607-TP

HER607-TP

DIODE GPP HE 6A R-6

Micro Commercial Co

2617 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 65pF @ 4V, 1MHz 75 ns - 800 V 6A -55°C ~ 150°C -
RS3G V7G

Таблицы данных

RS3G V7G

RS3G V7G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation

3672 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C -
JANS1N3595A-1

Таблицы данных

JANS1N3595A-1

JANS1N3595A-1

ZENER DIODE

Microchip Technology

2509 0.00
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Расследования

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Discontinued at Digi-Key Through Hole - 3 µs 2 nA @ 125 V 125 V 150mA -65°C ~ 175°C 1 V @ 200 mA
F1T2GHA1G

Таблицы данных

F1T2GHA1G

F1T2GHA1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation

3531 0.00
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
BAS316/DG/B3,135

Таблицы данных

BAS316/DG/B3,135

BAS316/DG/B3,135

DIODE GEN PURP 100V 250MA TO236

Nexperia USA Inc.

2127 0.00
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101, BAS16 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 1.5pF @ 0V, 1MHz 4 ns 500 nA @ 80 V 100 V 250mA (DC) 150°C (Max) 1.25 V @ 150 mA
6A40GHA0G

Таблицы данных

6A40GHA0G

6A40GHA0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

2043 0.00
- +

Добавить

Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1 V @ 6 A
Total 48193 Records«Prev1... 16271628162916301631163216331634...2410Next»
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