Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SR1504HA0G

Таблицы данных

SR1504HA0G

SR1504HA0G

DIODE SCHOTTKY 40V 15A R-6

Taiwan Semiconductor Corporation

3604 0.00
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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 15A -50°C ~ 150°C 550 mV @ 15 A
RSFBLHM2G

Таблицы данных

RSFBLHM2G

RSFBLHM2G

DIODE GEN PURP 100V 500MA SUBSMA

Taiwan Semiconductor Corporation

2273 0.00
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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 500mA -55°C ~ 150°C 1.3 V @ 500 mA
MBR7100 C0G

Таблицы данных

MBR7100 C0G

MBR7100 C0G

DIODE SCHOTTKY 100V 7.5A TO220AC

Taiwan Semiconductor Corporation

2552 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 7.5A -55°C ~ 150°C 920 mV @ 7.5 A
SS210LHMHG

Таблицы данных

SS210LHMHG

SS210LHMHG

DIODE SCHOTTKY 100V 2A SUB SMA

Taiwan Semiconductor Corporation

3944 0.00
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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 2A -55°C ~ 150°C 850 mV @ 2 A
SF16GHA0G

Таблицы данных

SF16GHA0G

SF16GHA0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2064 0.00
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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MBRF5100 C0G

Таблицы данных

MBRF5100 C0G

MBRF5100 C0G

DIODE SCHOTTKY 100V 5A ITO220AC

Taiwan Semiconductor Corporation

2487 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 5A -55°C ~ 150°C 900 mV @ 5 A
SR202 A0G

Таблицы данных

SR202 A0G

SR202 A0G

DIODE SCHOTTKY 20V 2A DO204AC

Taiwan Semiconductor Corporation

2243 0.00
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 2A -55°C ~ 125°C 550 mV @ 2 A
RSFBLHMHG

Таблицы данных

RSFBLHMHG

RSFBLHMHG

DIODE GEN PURP 100V 500MA SUBSMA

Taiwan Semiconductor Corporation

3754 0.00
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 500mA -55°C ~ 150°C 1.3 V @ 500 mA
MBR7100HC0G

Таблицы данных

MBR7100HC0G

MBR7100HC0G

DIODE SCHOTTKY 100V 7.5A TO220AC

Taiwan Semiconductor Corporation

2039 0.00
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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 7.5A -55°C ~ 150°C 920 mV @ 7.5 A
SS215L M2G

Таблицы данных

SS215L M2G

SS215L M2G

DIODE SCHOTTKY 150V 2A SUB SMA

Taiwan Semiconductor Corporation

2936 0.00
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF17G A0G

Таблицы данных

SF17G A0G

SF17G A0G

DIODE GEN PURP 500V 1A DO204AL

Taiwan Semiconductor Corporation

2561 0.00
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 1A -55°C ~ 150°C 1.7 V @ 1 A
MBRF5100HC0G

Таблицы данных

MBRF5100HC0G

MBRF5100HC0G

DIODE SCHOTTKY 100V 5A ITO220AC

Taiwan Semiconductor Corporation

3999 0.00
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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 5A -55°C ~ 150°C 900 mV @ 5 A
SR202HA0G

Таблицы данных

SR202HA0G

SR202HA0G

DIODE SCHOTTKY 20V 2A DO204AC

Taiwan Semiconductor Corporation

2309 0.00
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 2A -55°C ~ 125°C 550 mV @ 2 A
RSFDL M2G

Таблицы данных

RSFDL M2G

RSFDL M2G

DIODE GEN PURP 200V 500MA SUBSMA

Taiwan Semiconductor Corporation

3550 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 500mA -55°C ~ 150°C 1.3 V @ 500 mA
MBR7150 C0G

Таблицы данных

MBR7150 C0G

MBR7150 C0G

DIODE SCHOTTKY 150V 7.5A TO220AC

Taiwan Semiconductor Corporation

2822 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 7.5A -55°C ~ 150°C 950 mV @ 7.5 A
SS215L MHG

Таблицы данных

SS215L MHG

SS215L MHG

DIODE SCHOTTKY 150V 2A SUB SMA

Taiwan Semiconductor Corporation

3462 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF17GHA0G

Таблицы данных

SF17GHA0G

SF17GHA0G

DIODE GEN PURP 500V 1A DO204AL

Taiwan Semiconductor Corporation

2842 0.00
- +

Добавить

Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 1A -55°C ~ 150°C 1.7 V @ 1 A
MBRF5150 C0G

Таблицы данных

MBRF5150 C0G

MBRF5150 C0G

DIODE SCHOTTKY 150V 5A ITO220AC

Taiwan Semiconductor Corporation

3826 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 5A -55°C ~ 150°C 1.02 V @ 5 A
SR203 A0G

Таблицы данных

SR203 A0G

SR203 A0G

DIODE SCHOTTKY 30V 2A DO204AC

Taiwan Semiconductor Corporation

2601 0.00
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 2A -55°C ~ 125°C 550 mV @ 2 A
RSFDL MHG

Таблицы данных

RSFDL MHG

RSFDL MHG

DIODE GEN PURP 200V 500MA SUBSMA

Taiwan Semiconductor Corporation

3528 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 500mA -55°C ~ 150°C 1.3 V @ 500 mA
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