Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
FR607

Таблицы данных

FR607

FR607

DIODE GEN PURP 1KV 6A R-6

SMC Diode Solutions

2521 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 100pF @ 4V, 1MHz 500 ns 10 µA @ 1000 V 1000 V 6A -65°C ~ 125°C 1.2 V @ 6 A
IRD3CH5BD6

Таблицы данных

IRD3CH5BD6

IRD3CH5BD6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

3123 0.00
- +

Добавить

Расследования

Bulk RoHS - - Obsolete - - - - - - - -
SS210HR5G

Таблицы данных

SS210HR5G

SS210HR5G

DIODE SCHOTTKY 100V 2A DO214AA

Taiwan Semiconductor Corporation

2052 0.00
- +

Добавить

Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 100 V 100 V 2A -55°C ~ 150°C 850 mV @ 2 A
RS2A M4G

Таблицы данных

RS2A M4G

RS2A M4G

DIODE GEN PURP 50V 2A DO214AA

Taiwan Semiconductor Corporation

2890 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.3 V @ 2 A
RS1DLHRQG

Таблицы данных

RS1DLHRQG

RS1DLHRQG

DIODE GEN PURP 200V 800MA SUBSMA

Taiwan Semiconductor Corporation

2296 0.00
- +

Добавить

Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
1A1TA

Таблицы данных

1A1TA

1A1TA

DIODE GEN PURP 50V 1A R-1

SMC Diode Solutions

2812 0.00
- +

Добавить

Расследования

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A -65°C ~ 125°C 1 V @ 1 A
GPAS1006 MNG

Таблицы данных

GPAS1006 MNG

GPAS1006 MNG

DIODE GEN PURP 800V 10A TO263AB

Taiwan Semiconductor Corporation

3168 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 10A -55°C ~ 150°C 1.1 V @ 10 A
IRD3CH5DB6

Таблицы данных

IRD3CH5DB6

IRD3CH5DB6

DIODE GEN PURP 1.2KV 5A DIE

Infineon Technologies

3406 0.00
- +

Добавить

Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 96 ns 100 nA @ 1200 V 1200 V 5A -40°C ~ 150°C 2.7 V @ 5 A
SS210L R3G

Таблицы данных

SS210L R3G

SS210L R3G

DIODE SCHOTTKY 100V 2A SUB SMA

Taiwan Semiconductor Corporation

3526 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 2A -55°C ~ 150°C 850 mV @ 2 A
RS2AA M2G

Таблицы данных

RS2AA M2G

RS2AA M2G

DIODE GEN PURP 50V 1.5A DO214AC

Taiwan Semiconductor Corporation

3411 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
RS1DLHRTG

Таблицы данных

RS1DLHRTG

RS1DLHRTG

DIODE GEN PURP 200V 800MA SUBSMA

Taiwan Semiconductor Corporation

2477 0.00
- +

Добавить

Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
1A2TA

Таблицы данных

1A2TA

1A2TA

DIODE GEN PURP 100V 1A R-1

SMC Diode Solutions

2151 0.00
- +

Добавить

Расследования

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -65°C ~ 125°C 1 V @ 1 A
GPAS1007 MNG

Таблицы данных

GPAS1007 MNG

GPAS1007 MNG

DIODE GEN PURP 10A TO263AB

Taiwan Semiconductor Corporation

3325 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz - 5 µA @ 1000 V - 10A -55°C ~ 150°C 1.1 V @ 10 A
IRD3CH82DB6

Таблицы данных

IRD3CH82DB6

IRD3CH82DB6

DIODE GEN PURP 1.2KV 150A DIE

Infineon Technologies

2172 0.00
- +

Добавить

Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 355 ns 3 µA @ 1200 V 1200 V 150A -40°C ~ 150°C 2.7 V @ 150 A
SS210L RFG

Таблицы данных

SS210L RFG

SS210L RFG

DIODE SCHOTTKY 100V 2A SUB SMA

Taiwan Semiconductor Corporation

2884 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 2A -55°C ~ 150°C 850 mV @ 2 A
RS2AAHM2G

Таблицы данных

RS2AAHM2G

RS2AAHM2G

DIODE GEN PURP 50V 1.5A DO214AC

Taiwan Semiconductor Corporation

3903 0.00
- +

Добавить

Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
RS1GL MQG

Таблицы данных

RS1GL MQG

RS1GL MQG

DIODE GEN PURP 400V 800MA SUBSMA

Taiwan Semiconductor Corporation

2864 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
1A3TA

Таблицы данных

1A3TA

1A3TA

DIODE GEN PURP 200V 1A R-1

SMC Diode Solutions

2612 0.00
- +

Добавить

Расследования

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -65°C ~ 125°C 1 V @ 1 A
MBRS10100 MNG

Таблицы данных

MBRS10100 MNG

MBRS10100 MNG

DIODE SCHOTTKY 100V 10A TO263AB

Taiwan Semiconductor Corporation

2467 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 10A -55°C ~ 175°C -
IRD3CH82DD6

Таблицы данных

IRD3CH82DD6

IRD3CH82DD6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2497 0.00
- +

Добавить

Расследования

Bulk RoHS - - Obsolete - - - - - - - -
Total 48193 Records«Prev1... 15101511151215131514151515161517...2410Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Компания
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Связь

    Связь