Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
SBR3U60SLDQ-13

Таблицы данных

SBR3U60SLDQ-13

SBR3U60SLDQ-13

SBR DIODE POWERDI5060-8 T&R 2.5K

Diodes Incorporated

3853 0.57
- +

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Tape & Reel (TR) Automotive, AEC-Q101 Active 2 Independent Super Barrier 60 V 3A 600 mV @ 3 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 60 V -55°C ~ 175°C Surface Mount
32CTQ030-1

Таблицы данных

32CTQ030-1

32CTQ030-1

DIODE SCHOTTKY 30V 15A TO262

SMC Diode Solutions

2782 0.59
- +

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Tube - Active 1 Pair Common Cathode Schottky 30 V 15A 580 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 1.75 mA @ 30 V -55°C ~ 150°C Through Hole
MBRF2080CT

Таблицы данных

MBRF2080CT

MBRF2080CT

DIODE SCHOTTKY 80V 20A ITO220AB

Taiwan Semiconductor Corporation

2349 0.59
- +

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Tube - Active 1 Pair Common Cathode Schottky 80 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 80 V -55°C ~ 150°C Through Hole
HER1604G

Таблицы данных

HER1604G

HER1604G

DIODE ARRAY GP 300V 16A TO220AB

Taiwan Semiconductor Corporation

3401 0.59
- +

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Tube - Active 1 Pair Common Cathode Standard 300 V 16A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V -55°C ~ 150°C Through Hole
HERF1004G

Таблицы данных

HERF1004G

HERF1004G

DIODE ARRAY GP 300V ITO-220AB

Taiwan Semiconductor Corporation

3956 0.59
- +

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Tube - Active 1 Pair Common Cathode Standard 300 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V -55°C ~ 150°C Through Hole
HERF1005G

Таблицы данных

HERF1005G

HERF1005G

DIODE ARRAY GP 400V ITO-220AB

Taiwan Semiconductor Corporation

3577 0.59
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Tube - Active 1 Pair Common Cathode Standard 400 V 10A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V -55°C ~ 150°C Through Hole
HERF1007G

Таблицы данных

HERF1007G

HERF1007G

DIODE ARRAY GP 800V ITO-220AB

Taiwan Semiconductor Corporation

2015 0.59
- +

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Tube - Active 1 Pair Common Cathode Standard 800 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 800 V -55°C ~ 150°C Through Hole
HERF1007GA

Таблицы данных

HERF1007GA

HERF1007GA

DIODE ARRAY GP 800V ITO-220AB

Taiwan Semiconductor Corporation

3347 0.59
- +

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Tube - Active 1 Pair Common Anode Standard 800 V 10A 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 800 V -55°C ~ 150°C Through Hole
VS-HFA08TA60CSL-M3

Таблицы данных

VS-HFA08TA60CSL-M3

VS-HFA08TA60CSL-M3

DIODE ARRAY GP 600V 8A D2PAK

Vishay General Semiconductor - Diodes Division

2690 0.59
- +

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Tape & Reel (TR) HEXFRED® Active 1 Pair Common Cathode Standard 600 V 4A (DC) 2.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 3 µA @ 600 V -55°C ~ 150°C Surface Mount
VS-HFA08TA60CSR-M3

Таблицы данных

VS-HFA08TA60CSR-M3

VS-HFA08TA60CSR-M3

DIODE ARRAY GP 600V 8A D2PAK

Vishay General Semiconductor - Diodes Division

3409 0.59
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Tape & Reel (TR) HEXFRED® Active 1 Pair Common Cathode Standard 600 V 4A (DC) 2.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 3 µA @ 600 V -55°C ~ 150°C Surface Mount
NRVBD660CTG-VF01

Таблицы данных

NRVBD660CTG-VF01

NRVBD660CTG-VF01

DIODE ARRAY SCHOTTKY 60V 3A DPAK

onsemi

2104 0.59
- +

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Bulk,Tube SWITCHMODE™ Active 1 Pair Common Cathode Schottky 60 V 3A 700 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 60 V -65°C ~ 175°C Surface Mount
VIT1060C-M3/4W

Таблицы данных

VIT1060C-M3/4W

VIT1060C-M3/4W

DIODE SCHOTTKY 10A 60V TO-262AA

Vishay General Semiconductor - Diodes Division

2976 0.59
- +

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Tube Automotive, AEC-Q101, TMBS® Active 1 Pair Common Cathode Schottky 60 V 5A 700 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 700 µA @ 60 V -55°C ~ 150°C Through Hole
MBRB10150CT

Таблицы данных

MBRB10150CT

MBRB10150CT

DIODE SCHOTTKY 150V 10A D2PAK

Diodes Incorporated

2713 0.74
- +

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Tube,Tube Automotive, AEC-Q101 Active 1 Pair Common Cathode Schottky 150 V 5A 890 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 150 V -55°C ~ 175°C Surface Mount
LQA10T150C

Таблицы данных

LQA10T150C

LQA10T150C

DIODE CC 150V 5A DUAL TO-220AB

Power Integrations

2650 0.59
- +

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Tube Qspeed™ Active 1 Pair Common Cathode Standard 150 V 5A 1.1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 15.1 ns 250 µA @ 150 V -55°C ~ 150°C Through Hole
BYV32E-300PQ

Таблицы данных

BYV32E-300PQ

BYV32E-300PQ

DUAL ULTRAFAST POWER DIODE

WeEn Semiconductors

2323 0.59
- +

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Tube - Active 1 Pair Common Cathode Standard 300 V 10A 1.25 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 20 µA @ 300 V 175°C (Max) Through Hole
VB10150C-E3/8W

Таблицы данных

VB10150C-E3/8W

VB10150C-E3/8W

DIODE ARRAY SCHOTTKY 150V TO263

Vishay General Semiconductor - Diodes Division

3666 0.59
- +

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Tape & Reel (TR) TMBS® Active 1 Pair Common Cathode Schottky 150 V 5A 1.41 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 150 V -55°C ~ 150°C Surface Mount
VB10150C-E3/4W

Таблицы данных

VB10150C-E3/4W

VB10150C-E3/4W

DIODE ARRAY SCHOTTKY 150V TO263

Vishay General Semiconductor - Diodes Division

3359 0.59
- +

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Tube TMBS® Active 1 Pair Common Cathode Schottky 150 V 5A 1.41 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 150 V -55°C ~ 150°C Surface Mount
SDT20100CTFP

Таблицы данных

SDT20100CTFP

SDT20100CTFP

DIODE SCHOTTKY 100V 10A ITO220AB

Diodes Incorporated

3799 0.58
- +

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Tube - Active 1 Pair Common Cathode Schottky 100 V 10A 710 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 80 µA @ 100 V -55°C ~ 150°C Through Hole
SBR1060CT

Таблицы данных

SBR1060CT

SBR1060CT

DIODE ARRAY SBR 60V 5A TO220AB

Diodes Incorporated

2918 0.59
- +

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Tube SBR® Active 1 Pair Common Cathode Super Barrier 60 V 5A 680 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 60 V -65°C ~ 150°C Through Hole
UG1007GH

Таблицы данных

UG1007GH

UG1007GH

DIODE ARRAY GP 500V 10A TO220AB

Taiwan Semiconductor Corporation

3192 0.60
- +

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Расследования

Tube Automotive, AEC-Q101 Active 1 Pair Common Cathode Standard 500 V 10A 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 500 V -55°C ~ 150°C Through Hole
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