Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFPC50LCPBFMOSFET N-CH 600V 11A TO247-3 |
2544 | 4.26 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 600mOhm @ 6.6A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6020KNZC17MOSFET N-CH 600V 20A TO3PF |
2466 | 4.26 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 68W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6520KNZC17MOSFET N-CH 650V 20A TO3 |
2697 | 4.26 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 5V @ 630µA | 40 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 68W (Tc) | 150°C (TJ) | Through Hole |
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IXFA230N075T2-TRLMOSFET N-CH 75V 230A TO263 |
2088 | 4.27 |
ДобавитьРасследования |
Tape & Reel (TR) | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 1mA | 178 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IXFA180N10T2-TRLMOSFET N-CH 100V 180A TO263 |
2349 | 4.27 |
ДобавитьРасследования |
Tape & Reel (TR) | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6mOhm @ 50A, 10V | 4V @ 250µA | 185 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP04CN10NGXKSA1MV POWER MOS |
3480 | 4.28 |
ДобавитьРасследования |
Tube | * | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NVH4L110N65S3FSUPERFET3 FRFET AUTOMOTIVE 110MO |
2355 | 4.29 |
ДобавитьРасследования |
Tray | SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 740µA | 59 nC @ 10 V | ±30V | 2530 pF @ 400 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPDD60R102G7XTMA1MOSFET N-CH 600V 23A HDSOP-10 |
3332 | 4.29 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ G7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 102mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1320 pF @ 400 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMT800120DC-22897FET 120V 4.2 MOHM PQFN88 |
3598 | 4.29 |
ДобавитьРасследования |
Tape & Reel (TR) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 20A (Ta), 128A (Tc) | 6V, 10V | 4.2mOhm @ 20A, 10V | 4V @ 250µA | 107 nC @ 10 V | ±20V | 7850 pF @ 60 V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFA22N60P3MOSFET N-CH 600V 22A TO263AA |
3993 | 4.30 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 390mOhm @ 11A, 10V | 5V @ 1.5mA | 38 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMT800150DC-22897FET 150V 6.5 MOHMS PQFN88 |
3173 | 4.30 |
ДобавитьРасследования |
Tape & Reel (TR) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 15A (Ta), 99A (Tc) | 6V, 10V | 6.5mOhm @ 15A, 10V | 4V @ 250µA | 108 nC @ 10 V | ±20V | 8205 pF @ 75 V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTP12N70X2MOSFET N-CH 700V 12A TO220AB |
3883 | 4.31 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 19 nC @ 10 V | ±30V | 960 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
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IXTP12N70X2MMOSFET N-CH 700V 12A TO220 |
3898 | 4.31 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 19 nC @ 10 V | ±30V | 960 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFS4310ZTRLMOSFET N-CH 100V 120A D2PAK |
3841 | 2.88 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6860 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STH410N4F7-2AGMOSFET N-CH 40V 200A H2PAK-2 |
3512 | 4.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, STripFET™ F7 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 1.1mOhm @ 90A, 10V | 4.5V @ 250µA | 141 nC @ 10 V | ±20V | 11500 pF @ 25 V | - | 365W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHG33N60E-E3MOSFET N-CH 600V 33A TO247AC |
2036 | 4.33 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT7F100BMOSFET N-CH 1000V 7A TO247 |
3645 | 4.34 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 7A (Tc) | 10V | 2Ohm @ 4A, 10V | 5V @ 500µA | 58 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTMTS0D7N04CLTXGMOSFET N-CH 40V 67A/433A 8DFNW |
2118 | 4.34 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 67A (Ta), 433A (Tc) | 4.5V, 10V | 0.63mOhm @ 50A, 10V | 2.5V @ 250µA | 205 nC @ 10 V | ±20V | 12238 pF @ 25 V | - | 4.9W (Ta), 205W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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STB35N65DM2MOSFET N-CH 650V 28A D2PAK |
3654 | 7.23 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±25V | 2400 pF @ 100 V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPI80N08S406AKSA1MOSFET N-CH 80V 80A TO262-3 |
6785 | 2.90 |
ДобавитьРасследования |
Bulk,Tube | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 10V | 5.8mOhm @ 80A, 10V | 4V @ 90µA | 70 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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