Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SIHG24N65E-E3MOSFET N-CH 650V 24A TO247AC |
3446 | 4.02 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG24N65E-GE3MOSFET N-CH 650V 24A TO247AC |
3724 | 4.02 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHB33N60ET5-GE3MOSFET N-CH 600V 33A TO263 |
2282 | 4.02 |
ДобавитьРасследования |
Tape & Reel (TR) | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP65R145CFD7AAKSA1AUTOMOTIVE_COOLMOS PG-TO220-3 |
2239 | 3.96 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17A (Tc) | 10V | 145mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTMTS1D2N08HT8-80V IN PQFN88 FOR INDU |
2350 | 4.05 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPA65R125C7XKSA1MOSFET N-CH 650V 10A TO220-FP |
3031 | 4.06 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA10N60PMOSFET N-CH 600V 10A TO263 |
2106 | 4.06 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 740mOhm @ 5A, 10V | 5.5V @ 250µA | 32 nC @ 10 V | ±30V | 1610 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
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IXTQ48N20TMOSFET N-CH 200V 48A TO3P |
3436 | 4.06 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 48A (Tc) | 10V | 50mOhm @ 24A, 10V | 4.5V @ 250µA | 60 nC @ 10 V | ±30V | 3090 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R165CPXKSA1MOSFET N-CH 600V 21A TO220-FP |
2862 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 660µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPI60R165CPXKSA1HIGH POWER_LEGACY |
2004 | 4.07 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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STB43N60DM2MOSFET N-CH 600V 34A D2PAK |
3433 | 4.07 |
ДобавитьРасследования |
Tape & Reel (TR) | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMTS1D5N08MCPTNG 80V IN CEBU PQFN88 |
3151 | 4.07 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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2SK2225-EMOSFET N-CH 1500V 2A TO3PFM |
3457 | 4.08 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 2A (Ta) | 15V | 12Ohm @ 1A, 15V | - | - | ±20V | 984.7 pF @ 30 V | - | 50W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVMFS5C404NLWFAFT3GMOSFET N-CH 40V 370A 5DFN |
3832 | 4.08 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 370A (Tc) | 4.5V, 10V | 0.67mOhm @ 50A, 10V | 2V @ 250µA | 81 nC @ 4.5 V | ±20V | 12168 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF2804S-7PMOSFET N-CH 40V 240A D2PAK |
2789 | 4.09 |
ДобавитьРасследования |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 6930 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTA16N50PMOSFET N-CH 500V 16A TO263 |
2450 | 4.10 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 400mOhm @ 8A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | ±30V | 2250 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB65R150CFDAATMA1MOSFET N-CH 650V 22.4A D2PAK |
3884 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP35N65DM2MOSFET N-CH 650V 32A TO220 |
2069 | 4.11 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 110mOhm @ 16A, 10V | 5V @ 250µA | 56.3 nC @ 10 V | ±25V | 2540 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPF016N10NF2SATMA1TRENCH >=100V |
2694 | 4.12 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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NVMTS1D1N04CTXGT6 40V SL AIZU SINGLE NCH PQFN 8 |
3262 | 4.12 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 48.8A (Ta), 277A (Tc) | 10V | 1.1mOhm @ 50A, 10V | 4V @ 210µA | 86 nC @ 10 V | ±20V | 5410 pF @ 25 V | - | 4.7W (Ta), 153W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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