Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
|
R5019ANJTLMOSFET N-CH 500V 19A LPTS |
1000 | 6.27 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Ta) | - | - | - | - | - | - | - | 100W (Tc) | 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SIHF16N50C-E3MOSFET N-CH 500V 16A TO220 |
3842 | 3.83 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IPC30S2SN08NX2MA1MV POWER MOS |
2651 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
SIHP28N65EF-GE3MOSFET N-CH 650V 28A TO220AB |
3728 | 3.83 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 146 nC @ 10 V | ±30V | 3249 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXTA3N110MOSFET N-CH 1100V 3A TO263 |
2687 | 3.84 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1100 V | 3A (Tc) | 10V | 4Ohm @ 1.5A, 10V | 5V @ 250µA | 42 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
NTMFS4H02NT3GMOSFET N-CH 25V 37A/193A 5DFN |
2253 | 3.85 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 25 V | 37A (Ta), 193A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.1V @ 250µA | 38.5 nC @ 10 V | ±20V | 2651 pF @ 12 V | - | 3.13W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount |
| |
|
IXTP76N25TMMOSFET N-CH 250V 76A TO220 |
3205 | 3.86 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 76A (Tc) | 10V | 44mOhm @ 38A, 10V | 5V @ 250µA | 92 nC @ 10 V | ±20V | 4920 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IPP120N10S403AKSA1MOSFET N-CH 100V 120A TO220-3 |
7417 | 2.58 |
ДобавитьРасследования |
Bulk,Tube | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 180µA | 140 nC @ 10 V | ±20V | 10120 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXFP130N10TMOSFET N-CH 100V 130A TO220AB |
3263 | 3.87 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 1mA | 104 nC @ 10 V | - | 5080 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXTA50N25TMOSFET N-CH 250V 50A TO263 |
2699 | 3.88 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 50A (Tc) | 10V | 50mOhm @ 25A, 10V | 5V @ 1mA | 78 nC @ 10 V | ±30V | 4000 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SIHB24N65ET1-GE3MOSFET N-CH 650V 24A TO263 |
3709 | 3.89 |
ДобавитьРасследования |
Tape & Reel (TR) | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SIHB24N65ET5-GE3MOSFET N-CH 650V 24A TO263 |
2448 | 3.89 |
ДобавитьРасследования |
Tape & Reel (TR) | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IPB120N08S403ATMA1MOSFET N-CH 80V 120A TO263-3 |
3114 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 2.5mOhm @ 100A, 10V | 4V @ 223µA | 167 nC @ 10 V | ±20V | 11550 pF @ 25 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
FDB0690N1507LMOSFET N-CH 150V 3.8A TO263-7 |
800 | 2.98 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 3.8A (Tc) | 10V | 6.9mOhm @ 17A, 10V | 4V @ 250µA | 115 nC @ 10 V | ±20V | 8775 pF @ 75 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
NTMFS5C604NLT1G-UIL3MOSFET N-CH 60V 40A/287A 5DFN |
2224 | 3.89 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 120 nC @ 10 V | ±20V | 8900 pF @ 25 V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
AUIRF2903ZSTRLMOSFET N-CH 30V 160A D2PAK |
3779 | 3.91 |
ДобавитьРасследования |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 160A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240 nC @ 10 V | ±20V | 6320 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SIHH21N65E-T1-GE3MOSFET N-CH 650V 20.3A PPAK 8X8 |
2223 | 3.92 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.3A (Tc) | 10V | 170mOhm @ 11A, 10V | 4V @ 250µA | 99 nC @ 10 V | ±30V | 2404 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRFSL4127PBFMOSFET N-CH 200V 72A TO262 |
3778 | 3.92 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 72A (Tc) | - | 22mOhm @ 44A, 10V | 5V @ 250µA | 150 nC @ 10 V | - | 5380 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
AUIRF2804STRLMOSFET N-CH 40V 195A D2PAK |
2221 | 3.92 |
ДобавитьРасследования |
Tape & Reel (TR) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IPB024N10N5ATMA1MOSFET N-CH 100V 180A TO263-7 |
3773 | 3.93 |
ДобавитьРасследования |
Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.8V @ 183µA | 138 nC @ 10 V | ±20V | 10200 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
Запрос котировок
