Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IXTA50N25T-TRLMOSFET N-CH 250V 50A TO263 |
3602 | 3.48 |
ДобавитьРасследования |
Tape & Reel (TR) | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 50A (Tc) | 10V | 50mOhm @ 25A, 10V | 5V @ 1mA | 78 nC @ 10 V | ±30V | 4000 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMJS0D7N03CGTWGWIDE SOA |
2651 | 3.48 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 59A (Ta), 410A (Tc) | 10V | 650µOhm @ 30A, 10V | 2.2V @ 280µA | 147 nC @ 10 V | ±20V | 12300 pF @ 15 V | - | 4W (Ta), 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AOK9N90MOSFET N-CH 900V 9A TO247 |
2448 | 3.49 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 9A (Tc) | 10V | 1.3Ohm @ 4.5A, 10V | 4.5V @ 250µA | 58 nC @ 10 V | ±30V | 2560 pF @ 25 V | - | 368W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPF014N08NF2SATMA1TRENCH 40<-<100V PG-TO263-7 |
2287 | 3.49 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRF2804LMOSFET N-CH 40V 195A TO262 |
2050 | 2.67 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA42N25PMOSFET N-CH 250V 42A TO263 |
2091 | 3.51 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 42A (Tc) | 10V | 84mOhm @ 500mA, 10V | 5.5V @ 250µA | 70 nC @ 10 V | ±20V | 2300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXTP20N65X2MMOSFET N-CH 650V 20A TO220 |
3592 | 3.51 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 185mOhm @ 10A, 10V | 4.5V @ 250µA | 27 nC @ 10 V | ±30V | 1450 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA170N075T2MOSFET N-CH 75V 170A TO263 |
3688 | 3.51 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 170A (Tc) | 10V | 5.4mOhm @ 50A, 10V | 4V @ 250µA | 109 nC @ 10 V | ±20V | 6860 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IXTA200N055T2-7MOSFET N-CH 55V 200A TO263-7 |
3664 | 3.51 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 200A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 250µA | 109 nC @ 10 V | ±20V | 6970 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIHB24N65E-E3MOSFET N-CH 650V 24A D2PAK |
3257 | 3.51 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHB24N65E-GE3MOSFET N-CH 650V 24A D2PAK |
3293 | 3.51 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP185N55F3MOSFET N-CH 55V 120A TO220AB |
2693 | 3.52 |
ДобавитьРасследования |
Tube | STripFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 120A (Tc) | 10V | 3.8mOhm @ 60A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG21N65EF-GE3MOSFET N-CH 650V 21A TO247AC |
3585 | 3.52 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106 nC @ 10 V | ±30V | 2322 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTQ60N10TMOSFET N-CH 100V 60A TO3P |
3845 | 3.53 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 18mOhm @ 25A, 10V | 4.5V @ 50µA | 49 nC @ 10 V | ±30V | 2650 pF @ 25 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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TK12A60W,S4VXMOSFET N-CH 600V 11.5A TO220SIS |
2471 | 3.54 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | Super Junction | 35W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFS4228PBFMOSFET N-CH 150V 83A D2PAK |
2716 | 3.54 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107 nC @ 10 V | ±30V | 4530 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMFSS1D3N06CL60V T6 MAX DIE IN 5X6 SOURCE DOW |
2821 | 3.54 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 31A (Ta), 243A (Tc) | 4.5V, 10V | 1.3mOhm @ 50A, 10V | 2V @ 250µA | 117 nC @ 10 V | ±20V | 8190 pF @ 30 V | - | 2.5W (Ta), 153W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMTS1D5N08HT8-80V IN PQFN88 FOR INDU |
2693 | 3.55 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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SPI21N50C3XKSA1MOSFET N-CH 560V 21A TO262-3 |
3002 | 3.55 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFA5N100P-TRLMOSFET N-CH 1000V 5A TO263 |
2931 | 3.56 |
ДобавитьРасследования |
Tape & Reel (TR) | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 5A (Tc) | 10V | 2.8Ohm @ 2.5A, 10V | 6V @ 250µA | 33.4 nC @ 10 V | ±30V | 1830 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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