Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPDD60R125G7XTMA1

Таблицы данных

IPDD60R125G7XTMA1

IPDD60R125G7XTMA1

MOSFET N-CH 600V 20A HDSOP-10

Infineon Technologies

2156 3.34
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 125mOhm @ 6.4A, 10V 4V @ 320µA 27 nC @ 10 V ±20V 1080 pF @ 400 V - 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA3N100P

Таблицы данных

IXTA3N100P

IXTA3N100P

MOSFET N-CH 1000V 3A TO263

IXYS

2507 3.34
- +

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP56N15T

Таблицы данных

IXTP56N15T

IXTP56N15T

MOSFET N-CH 150V 56A TO220AB

IXYS

2066 3.34
- +

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Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 56A (Tc) 10V 36mOhm @ 28A, 10V 4.5V @ 250µA 34 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
TSM70N600ACL X0G

Таблицы данных

TSM70N600ACL X0G

TSM70N600ACL X0G

MOSFET N-CH 700V 8A TO262S

Taiwan Semiconductor Corporation

2807 3.35
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 2.4A, 10V 4V @ 250µA 12.6 nC @ 10 V ±30V 743 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB120N10S403ATMA1

Таблицы данных

IPB120N10S403ATMA1

IPB120N10S403ATMA1

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies

3841 3.36
- +

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Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.5mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA65R150CFDXKSA2

Таблицы данных

IPA65R150CFDXKSA2

IPA65R150CFDXKSA2

MOSFET N-CH 650V 22.4A TO220

Infineon Technologies

2781 3.36
- +

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Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS6535TRL

Таблицы данных

AUIRFS6535TRL

AUIRFS6535TRL

MOSFET N-CH 300V 19A D2PAK

Infineon Technologies

2382 3.37
- +

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Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 300 V 19A (Tc) 10V 185mOhm @ 11A, 10V 5V @ 150µA 57 nC @ 10 V ±20V 2340 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS5C406NLT1G

Таблицы данных

NTMFS5C406NLT1G

NTMFS5C406NLT1G

MOSFET N-CH 40V 53A/362A 5DFN

onsemi

3569 3.37
- +

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 362A (Tc) 4.5V, 10V 0.7mOhm @ 50A, 10V 2V @ 280µA 149 nC @ 10 V ±20V 9400 pF @ 20 V - 3.9W (Ta), 179W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STL33N60M6

Таблицы данных

STL33N60M6

STL33N60M6

MOSFET 600V 21A POWERFLAT HV

STMicroelectronics

2697 3.37
- +

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Расследования

Tape & Reel (TR) MDmesh™ M6 Active - MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 137mOhm @ 10.5A, 10V 4.75V @ 250µA 33.4 nC @ 10 V ±25V 1515 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR5305

Таблицы данных

AUIRFR5305

AUIRFR5305

MOSFET P-CH 55V 31A DPAK

Infineon Technologies

2777 1.67
- +

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Расследования

Bulk,Tube HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA90N075T2

Таблицы данных

IXTA90N075T2

IXTA90N075T2

MOSFET N-CH 75V 90A TO263

IXYS

3610 3.37
- +

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Расследования

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDBL9406L-F085

Таблицы данных

FDBL9406L-F085

FDBL9406L-F085

MOSFET N-CH 40V 43A/240A 8HPSOF

onsemi

2545 3.37
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 40 V 43A (Ta), 240A (Tc) 4.5V, 10V 1.1mOhm @ 80A, 10V 3V @ 250µA 121 nC @ 10 V ±20V 8600 pF @ 20 V - 3.5W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA12N65X2

Таблицы данных

IXTA12N65X2

IXTA12N65X2

MOSFET N-CH 650V 12A TO263AA

IXYS

3797 3.38
- +

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Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 300mOhm @ 6A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 1100 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM16ND50CI C0G TSM16ND50CI C0G

TSM16ND50CI C0G

MOSFET N-CH 500V 16A ITO220

Taiwan Semiconductor Corporation

2651 3.38
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 350mOhm @ 4A, 10V 4.5V @ 250µA 53 nC @ 10 V ±30V 2551 pF @ 50 V - 59.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N100D2HV-TRL IXTA3N100D2HV-TRL

IXTA3N100D2HV-TRL

MOSFET N-CH 1000V 3A TO263HV

IXYS

3865 3.38
- +

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Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tj) 0V 6Ohm @ 1.5A, 0V 4.5V @ 250µA 37.5 nC @ 5 V ±20V 1020 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB2532-F085

Таблицы данных

FDB2532-F085

FDB2532-F085

MOSFET N-CH 150V 79A TO263AB

onsemi

3371 3.38
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 79A (Tc) 6V, 10V 16mOhm @ 33A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 5870 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP1N120P

Таблицы данных

IXTP1N120P

IXTP1N120P

MOSFET N-CH 1200V 1A TO220AB

IXYS

3260 3.40
- +

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Расследования

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1A (Tc) 10V 20Ohm @ 500mA, 10V 4.5V @ 50µA 17.6 nC @ 10 V ±20V 550 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA20N50P3

Таблицы данных

IXFA20N50P3

IXFA20N50P3

MOSFET N-CH 500V 20A TO263

IXYS

2188 3.40
- +

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Расследования

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 300mOhm @ 10A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1800 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMTS002N08MC

Таблицы данных

NTMTS002N08MC

NTMTS002N08MC

PTNG 80V IN CEBU PQFN88

onsemi

3160 3.40
- +

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Расследования

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
NDFP03N150CG

Таблицы данных

NDFP03N150CG

NDFP03N150CG

MOSFET N-CH 1500V 2.5A TO220-3

onsemi

3235 3.41
- +

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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1500 V 2.5A (Ta) 10V 10.5Ohm @ 1A, 10V - 34 nC @ 10 V ±30V 650 pF @ 30 V - 2W (Ta), 32W (Tc) 150°C (TJ) Through Hole
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